[1] Udrea, F.; Santra, S.; Gardner, J.W.; , "CMOS temperature sensors - concepts, state-ofthe- art and prospects," Semiconductor Conference, 2008. CAS 2008. International , vol.1, no., pp.31-40, 13-15 Oct. 2008 [2] Law, M.K.; Bermak, A.; , "A Time Domain differential CMOS Temperature Sensor with Reduced Supply Sensitivity," Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on , vol., no., pp.2126-2129, 18-21 May 2008 [3] Chan-Kyung Kim; Bai-Sun Kong; Chil-Gee Lee; Young-Hyun Jun; , "CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control," Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on , vol., no., pp.3094-3097, 18-21 May 2008 [4] Danaie, M.; Lotfi, R.; , "A low-voltage high-PSRR CMOS PTAT & constant-g/sub m/reference circuit," Circuits and Systems, 2005. 48th Midwest Symposium on , vol., no., pp.1807-1810 Vol. 2, 7-10 Aug. 2005 [5] Pertijs, M.A.P.; Meijer, G.C.M.; Huijsing, J.H.; , "Precision temperature measurement using CMOS substrate pnp transistors," Sensors Journal, IEEE , vol.4, no.3, pp. 294- 300, June 2004 [6] Filanovsky, I.M.; Allam, A.; , "Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits," Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on , vol.48, no.7, pp.876-884, Jul 2001 [7] Bakker, A.; Huijsing, J.H.; , "Micropower CMOS temperature sensor with digital output," Solid-State Circuits, IEEE Journal of , vol.31, no.7, pp.933-937, Jul 1996 doi: 10.1109/4.508205 [8] Fiori, F.; Crovetti, P.S.; , "A new compact temperature-compensated CMOS current reference," Circuits and Systems II: Express Briefs, IEEE Transactions on , vol.52, no.11, pp. 724- 728, Nov. 2005 [9] Qikai Chen; Meterelliyoz, M.; Roy, K.; , "A CMOS thermal sensor and its applications in temperature adaptive design," Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on , vol., no., pp.6 pp.-248, 27-29 March 2006 [10] Fiori, F.; Crovetti, P.S.; , "A new compact temperature-compensated CMOS current reference," Circuits and Systems II: Express Briefs, IEEE Transactions on , vol.52, no.11,pp. 724- 728, Nov. 2005Paragraph. [11] Jiang Li, Xu Weisheng, Yu Youlin, Accurate operation of a CMOS integrated temperature sensor, Microelectronics Journal, Volume 41, Issue 12, December 2010, Pages 897-905, ISSN 0026-2692, DOI: 10.1016/j.mejo.2010.08.001. [12] Dong-Ok Han; Yong-Il Kwon; Tah-Joon Park; Heon-Chul Park; , "A CMOS temperature sensor with calibration function using band gap voltage reference," Sensing Technology, 2008. ICST 2008. 3rd International Conference on , vol., no., pp.496-499, Nov. 30 2008-Dec. 3 2008 [13] Joseph Tso-sheng Tsai; Herming Chiueh; . “High Linear Voltage References for on-chip CMOS Smart Temperature Sensor from -60°C to 140°C”, IEEE Journal of Solid-State Circuits, 2008 [14] Paulo Cesar Crepaldi, Tales Cleber Pimenta, and Robson Luiz Moreno. 2010. A CMOS low-voltage low-power temperature sensor. Microelectron. J. 41, 9 (September 2010) [15] Nima Sadeghi, Shahriar Mirabbasi, and Chad P. J. Bennington. “A 2.5 V 0.13 μm CMOS Amplifier for a High-Temperature Sensor System” IEEE International NEWCAS-TAISA Conference, P. 263-6, June 2009 [16] Romov, V and Kluit, R","A Radiation Hard Current Reference Circuit in a Standard 0.13μm CMOS Technology.", CERN 2008 [17] Hänsler, Kurt ; Bonacini, S ; Moreira, P, “Circuit design with a commercial 0.13 m CMOS technology for high energy physics application”, 9th Workshop on Electronics for LHC Experiments, Amsterdam, The Netherlands, 29 Sep - 3 Oct 2003, pp.71-77 [18] Gromov, V. and Annema, A.-J. and Kluit, R. and Visschers, J.L. and Timmer, P. (2007), " A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology". IEEE transactions on nuclear science, 54 (6). pp. 2727-2733. ISSN 0018-9499 [19] Anelli, G.; Campbell, M.; Delmastro, M.; Faccio, F.; Floria, S.; Giraldo, A.; Heijne, E.; Jarron, P.; Kloukinas, K.; Marchioro, A.; Moreira, P.; Snoeys, W.; , "Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects," Nuclear Science, IEEE Transactions on , vol.46, no.6, pp.1690-1696, Dec 1999 [20] Gromov, V.; Annema, A.J.; Kluit, R.; Visschers, J.L.; Timmer, P.; , "A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 μm CMOS Technology," Nuclear Science,IEEE Transactions on , vol.54, no.6, pp.2727-2733, Dec. 2007 [21] Dodd, P.E.; Shaneyfelt, M.R.; Schwank, J.R.; Felix, J.A.; , "Current and Future Challenges in Radiation Effects on CMOS Electronics," Nuclear Science, IEEE Transactionson , vol.57, no.4, pp.1747-1763, Aug. 2010 [22] David E. Duarte, George Geannopoulos,
Usman Mughal, Keng L. Wong and Greg Taylor,"Temperature Sensor Design in a High Volume
Manufacturing 65nm CMOS Digital Process", Intel Corporation Hillsboro, OR
97124, USA [23] Paulo Moreira, "130
nm Bandgap Design Review", 2005 Cern [24] Hironori Banba, Hitoshi Shiga, Akira Umezawa, Takeshi Miyaba, Toru Tanzawa, Shigeru Atsumi, Koji Sakui, CMOS Bandgap Reference Circuit with Sub-1-V Operation", IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 34, NO. 5, MAY 1999